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| Advanced Technical Information MIO 1200-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C' C C IC80 = 1200 A = 2500 V VCES VCE(sat) typ. = 2.5 V G E' E E E IGBT Symbol VCES VGES IC80 ICM tSC TC = 80C tp = 1 ms; TC = 80C VCC = 1800 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125C Conditions Conditions VGE = 0 V Maximum Ratings 2500 20 1200 2400 10 V V A A s Features * NPT IGBT - Low-loss - Smooth switching waveforms for good EMC * Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications * AC power converters for - industrial drives - windmills - traction * LASER pulse generator Symbol Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.5 3.1 6 3.4 7.5 V V V VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres Qge RthJC IC = 1200 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 240 mA; VCE = VGE VCE = 2500 V; VGE = 0 V; TVJ = 125C VCE = 0 V; VGE = 20 V; TVJ = 125C 120 mA 500 nA 365 250 980 345 1150 1250 186 13.7 3.0 12.2 ns ns ns ns mJ mJ nF nF nF C 0.009 K/W Inductive load; TVJ = 125C; VGE = 15 V; VCC = 1250V; IC = 1200A; RG = 1.5; L = 100nH VCE = 25 V; VGE = 0 V; f = 1 MHz IC = 1200 A; VCE = 1250 V; VGE = 15 V Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. 416 (c) 2004 IXYS All rights reserved 1-6 Advanced Technical Information MIO 1200-25E10 Diode Symbol IF80 IFSM Conditions TC = 80C VR = 0 V; TVJ = 125C; tp = 10 ms; half-sinewave Maximum Ratings 1200 11000 A A Symbol VF IRM trr QRR Erec RthJC Conditions IF = 1200 A; TVJ = 25C TVJ = 125C Characteristic Values min. typ. max. 1.75 1.8 1180 970 1150 990 V V A ns C mJ 0.017 K/W VCC = 1250 V; IC = 1200 A; VGE = 15 V; RG = 1.5 ; TVJ = 125C Inductive load; L = 100nH Forward voltage is given at chip level Module Symbol TJM TVJ Tstg VISOL Md Conditions max. junction temperature Operating temperature Storage temperature 50 Hz Mounting torque Base-heatsink, M6 screws Main terminals, M8 screws Maximum Ratings +150 -40...+125 -40...+125 5000 4-6 8 - 10 C C C V~ Nm Nm Symbol dA dS L Rterm-chip *) RthCH Weight Conditions Clearance distance Surface creepage distance terminal to base terminal to terminal terminal to base terminal to terminal Characteristic Values min. typ. max. 23 19 33 33 10 0.085 0.006 1500 mm mm mm mm nH m K/W g Module stray inductance, C to E terminal Resistance terminal to chip per module; grease = 1 W/m*K *) V = VCE(sat) + Rterm-chip * IC resp. V = VF + Rterm-chip * IF 2-6 (c) 2004 IXYS All rights reserved 416 Advanced Technical Information MIO 1200-25E10 2400 2200 2000 1800 1600 1400 IC [A] 1200 1000 800 600 400 200 0 0 1 2 3 VCE [V] 4 5 6 9V IC [A] 17 V 15 V 13 V 11 V 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 Tvj = 25C 200 0 0 1 2 3 VCE [V] 4 5 6 Tvj = 125 C 17 V 15 V 13 V 11 V 9V Fig. 1 Typical output characteristics, chip level 2400 2200 2000 25 C 1800 1600 1400 IC [A] 1200 1000 800 600 400 200 0 0 1 2 VCE [V] 3 4 5 VGE = 15 V 125 C Fig. 2 Typical output characteristics, chip level 2400 2200 2000 1800 1600 1400 IC [A] 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] 125 C 25 C Fig. 3 Typical onstate characteristics, chip level 20 Fig. 4 Typical transfer characteristics, chip level 1000 VCC = 1250 15 VCC = 1750 100 Cies VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VGE [V] 10 C [nF] Coes 10 5 IC = 1200 A Tvj = 25 C 0 0 2 4 6 Qg [C] 8 10 12 1 0 5 10 Cres 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics (c) 2004 IXYS All rights reserved 3-6 416 Fig. 6 Typical capacitances vs collector-emitter voltage Advanced Technical Information MIO 1200-25E10 3.5 VCC = 1250 V R G = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH 6.0 VCC = 1250 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH Eon 3.0 5.0 E on 2.5 4.0 2.0 E off 1.5 Eon, Eoff [J] E on , E off [J] 3.0 2.0 1.0 Eoff 0.5 1.0 0.0 0 1000 IC [A] 2000 3000 0.0 0 5 10 RG [ohm] 15 20 Fig. 7 Typical switching energies per pulse vs collector current 10 Fig. 8 Typical switching energies per pulse vs gate resistor 10 VCC = 1250 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH td(off) td(off) td(on), tr, td(off), tf [s] 1 tf td(on), tr, td(off), tf td(on) tr 1 td(on) 0.1 tr VCC = 1250 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH tf 0.01 0 500 1000 IC [A] 1500 2000 2500 0.1 0 5 10 RG [ohm] 15 20 Fig. 9 Typical switching timesvs collector current 2.5 VCC 1800 V Fig. 10 Typical switching timesvs gate resistor 2400 2200 2000 2 1800 1600 1.5 ICpulse / IC IF [A] 1400 1200 1000 1 800 600 0.5 IC, Chip IC, Module 0 0 500 1000 1500 VCE [V] 2000 2500 3000 400 200 0 0 0.5 1 VF [V] 1.5 2 2.5 125 C 25 C Fig. 11 Turn-off safe operating area (RBSOA) 4-6 (c) 2004 IXYS All rights reserved 416 Fig. 12 Typical diode forward characteristics, chip level Advanced Technical Information MIO 1200-25E10 1600 VCC = 1250 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH 1400 1200 IRM [A], QRR [C] 1000 1600 Q RR 1400 1200 1100 1000 1200 E rec [mJ], I RM [A], Q RR [C] IRM 1000 E rec 900 800 Erec [mJ] 700 600 500 400 300 200 QRR 800 Erec 600 IRM 400 200 800 600 400 200 VCC = 1250 V R G = 1.5 ohm VGE = 15 V T vj = 125 C L = 100 nH 100 0 0 500 1000 1500 IF [A] 2000 2500 0 0 5 10 RG [ohm] 15 20 0 Fig. 13 Typical reverse recovery characteristics vs forward current Fig. 14 Typical reverse recovery characteristics vs gate resistor 0.1 Zth(j-c) Diode Zth(j-h) [K/W] IGBT, DIODE 0.01 Zth(j-c) IGBT Zth JC(t) = Ri(1 - e -t/ i ) i =1 n i 0.001 1 5.97 179 11.1 189 2 1.99 22 3.36 30 3 0.619 2.4 1.27 7.4 4 0.465 0.54 1.34 1.4 IGBT DIODE 0.01 0.1 t [s] 1 10 Ri(K/kW) i(ms) Ri(K/kW) i(ms) 0.0001 0.001 Fig. 15 Thermal impedance vs time (c) 2004 IXYS All rights reserved 5-6 416 Advanced Technical Information MIO 1200-25E10 Outline drawing ' ' Note: all dimensions are shown in mm 6-6 (c) 2004 IXYS All rights reserved 416 |
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